This report studies the Silicon on Insulator (SOI) market. Silicon on Insulator (SOI) is a semiconductor fabrication technique developed by IBM that uses pure crystal silicon and silicon oxide for integrated circuits (ICs) and microchips. An SOI microchip processing speed is often 30% faster than today's complementary metal-oxide semiconductor (CMOS)-based chips and power consumption is reduced 80%, which makes them ideal for mobile devices. SOI chips also reduce the soft error rate, which is data corruption caused by cosmic rays and natural radioactive background signals.
Silicon on Insulator (SOI) is a new type of starting material for the chipmaking process. SOI wafers have three layers; a thin surface layer of silicon (from a few hundred Angstrom to several microns thick) where the transistors are formed, an underlying layer of insulating material on a support or "handle" bulk silicon wafer. The insulating layer, usually made of silicon dioxide, is referred to as the "buried oxide" or "BOX", and is usually a few thousand Angstroms thick. Transistors built within the top silicon layer, switch signals faster, run at lower voltages, and are much less vulnerable to signal noise from background cosmic ray particles. Each transistor is isolated from its neighbor by a complete layer of silicon dioxide. These transistors are immune to "latch-up" problems and can be spaced closer together than transistors built on bulk silicon wafers. Building circuits on SOI increases Fab productivity by allowing for more compact circuit designs, yielding more chips per wafer.
SOI enables increased chip functionality without the cost of major Fab process equipment changes. Faster circuit operation and lower operating voltages have produced a powerful surge in the performance of high-speed network servers and new designs for hand-held computing and communication devices with longer battery life. Advanced circuits, using multiple layers of SOI-type device silicon, can lead the way to a coupling of electrical and optical signal processing into a single chip resulting in a dramatic broadening of communication bandwidth and new applications such as global-ranging, direct-link entertainment and communication to hand-held devices.
The market in APAC is expected to grow at the highest CAGR during 2018–2023. APAC is witnessing an increase in the use of SOI products owing to the presence of a large number of consumer electronic companies, smartphone manufacturers, and wafer and foundry players in APAC.
The global Silicon on Insulator market was valued at 500 million US$ in 2018 and will reach 1830 million US$ by the end of 2025, growing at a CAGR of 17.6% during 2019-2025.
This report focuses on Silicon on Insulator volume and value at global level, regional level and company level. From a global perspective, this report represents overall Silicon on Insulator market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of Silicon on Insulator in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their Silicon on Insulator manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.
The following manufacturers are covered:
Soitec SA
Shin-Etsu Chemical
SunEdison
...
Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India
Segment by Type
300mm SOI
Small Diameters
Segment by Application
Automobile and Smart Industry
Consumer Electronic
Others
Summary:
Get latest Market Research Reports on Silicon on Insulator. Industry analysis & Market Report on Silicon on Insulator is a syndicated market report, published as Global Silicon on Insulator Market Professional Survey Report 2019. It is complete Research Study and Industry Analysis of Silicon on Insulator market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.