SiC-MOSFETs and GaN-MOSFETs, the next generation power devices, have very low loss during high-frequency switching operation, enabling the downsizing of passive components without compromising the conversion efficiency of the system. For this reason, SiC-MOSFETs and GaN-MOSFETs are attracting attention as next-generation power devices, and are beginning to be used in a wide range of applications, including power supplies for EVs and servers, industrial equipment, UPS (uninterruptible power supplies), and Photovoltaic Power conditioner. The transition from Si to SiC and GaN power devices will allow for higher power capacity and higher switching frequency ranges.
According to our (Global Info Research) latest study, the global SiC and GaN Gate Drivers market size was valued at US$ 535 million in 2023 and is forecast to a readjusted size of USD 872 million by 2030 with a CAGR of 7.1% during review period.
Disruptive new applications, like electric vehicles (EVs) and energy storage systems (ESS), are creating demand for ultra-efficient, high power density, high frequency SiC power converters. On-board traction motor drives are looking at the highest power density to reduce size and weight and gain new efficiency records, while off-board fast chargers are seeking for high voltages (up to 2000 VDC, >150 kW) and complex high frequency topologies, resulting in a total system cost reduction on magnetics, mechanics, and assembly. On top of that, these new applications are also pushing the developments of innovative, multicore control processors, and are able to manage complex control algorithms and assure system efficiency and stability when working in bidirectional mode—from the ac grid to the dc load and vice versa.
This report is a detailed and comprehensive analysis for global SiC and GaN Gate Drivers market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2024, are provided.
Key Features:
Global SiC and GaN Gate Drivers market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030
Global SiC and GaN Gate Drivers market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030
Global SiC and GaN Gate Drivers market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030
Global SiC and GaN Gate Drivers market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2019-2024
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for SiC and GaN Gate Drivers
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global SiC and GaN Gate Drivers market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include STMicroelectronics, Infineon, Rohm Semiconductor, ON Semiconductor, Microchip Technology, Renesas Electronics, NXP Semiconductors, Power Integrations, Texas Instruments, Allegro MicroSystems, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
SiC and GaN Gate Drivers market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
SiC Gate Drivers
GaN Gate Drivers
Market segment by Application
Automotive
Industrial
Consumer Electronics
Communications
Others
Major players covered
STMicroelectronics
Infineon
Rohm Semiconductor
ON Semiconductor
Microchip Technology
Renesas Electronics
NXP Semiconductors
Power Integrations
Texas Instruments
Allegro MicroSystems
Analog Devices
Broadcom
Diodes
Littelfuse
Wolfspeed
Efficient Power Conversion
MPS
Skyworks
Navitas
Cissoid
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC and GaN Gate Drivers product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC and GaN Gate Drivers, with price, sales quantity, revenue, and global market share of SiC and GaN Gate Drivers from 2019 to 2024.
Chapter 3, the SiC and GaN Gate Drivers competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC and GaN Gate Drivers breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2019 to 2030.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2019 to 2030.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2019 to 2024.and SiC and GaN Gate Drivers market forecast, by regions, by Type, and by Application, with sales and revenue, from 2025 to 2030.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC and GaN Gate Drivers.
Chapter 14 and 15, to describe SiC and GaN Gate Drivers sales channel, distributors, customers, research findings and conclusion.
Summary:
Get latest Market Research Reports on SiC and GaN Gate Drivers. Industry analysis & Market Report on SiC and GaN Gate Drivers is a syndicated market report, published as Global SiC and GaN Gate Drivers Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030. It is complete Research Study and Industry Analysis of SiC and GaN Gate Drivers market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.