IGBT and MOSFET gate driver photocouplers are a semiconductor device that provides a way to rapidly switch the input signal of high power IGBTs and MOSFETs while providing for high electrical isolation. Isolation is important because it blocks potential high voltages, isolates the ground and prevents noise currents from entering the low voltage control circuitry. Such signals can interfere with circuit operation and damage sensitive circuits. They are used in applications like motor control (where rapid switching can be used as a speed controller), Inverters and switched-mode power supplies. This may also be very important in meeting safety compliance regulations.
IGBT stands for insulated-gate bipolar transistor. MOSFET stands for metal oxide semiconductor field effect transistor. These are high-speed solid state switches not inside the device itself. They require extremely little current to turn them on relative to the current being switched. Because of the high currents these devices can switch (even hundreds of Amps), the switching currents required to switch the device on and off can still be quite high. The IGBT or MOSFETs gate input capacitance is in part created by an effect caused by negative feedback of the amplifier referred to as the Miller Effect or reverse transfer capacitance. This effect increases the capacitance roughly in proportion to the gain of the switch. The driver circuit needs to be capable of driving this load, being able to rapidly switch the voltage levels on the gate of the power IGBT or MOSFET to turn the device on and off. Time in the transition between on and off levels leads to power being dissipated in the IGBT or MOSFET, lowers efficiency or possibly even damages the device.
The device has a low voltage input that can turn the internal photodiode on or off.
This usually requires a voltage transition across the LEDs forward voltage typically around 1-1.4 Volts and current of around 10mA. A beam of light from the LED crosses an electrically insulting barrier and is sensed by a photo detector. This signal is used to turn the IGBT or MOSFET Driver in the device on and off. The driver must be able to provide an extremely fast transition on either switching transition to maintain the efficiency of the external IGBT or MOSFET switch. This means the driver must be able to sink or source very large (even amps) of current during these edges to charge or discharge the input capacitance quickly.
The driver circuitry may have integrated fault detection circuitry to tell if the switch is being unduly stressed by the load, or some failure condition has occurred. These signals can be sent by some devices back across the photodiode isolated barrier to the low voltage side so that it can be detected by the isolated control circuitry.
The IGBT and MOSFET Gate Driver Photocoupler market was valued at xx Million US$ in 2018 and is projected to reach xx Million US$ by 2025, at a CAGR of xx% during the forecast period. In this study, 2018 has been considered as the base year and 2019 to 2025 as the forecast period to estimate the market size for IGBT and MOSFET Gate Driver Photocoupler.
This report presents the worldwide IGBT and MOSFET Gate Driver Photocoupler market size (value, production and consumption), splits the breakdown (data status 2014-2019 and forecast to 2025), by manufacturers, region, type and application.
This study also analyzes the market status, market share, growth rate, future trends, market drivers, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter's Five Forces Analysis.
The following manufacturers are covered in this report:
California Eastern Laboratories
Evertight Electronics
Isocom Components
IXYS
Lite-On Technology
ON Semiconductor
Renesas
Sharp
Silicon Labs
Toshiba Memory
Vishay
IGBT and MOSFET Gate Driver Photocoupler Breakdown Data by Type
600V
1000V
1500V
2000V
Others
IGBT and MOSFET Gate Driver Photocoupler Breakdown Data by Application
Motor Control
Inverters
Switched-Mode Power
Others
IGBT and MOSFET Gate Driver Photocoupler Production by Region
North America
Europe
China
Japan
South Korea
IGBT and MOSFET Gate Driver Photocoupler Consumption by Region
North America
United States
Canada
Mexico
Europe
Germany
France
UK
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
Indonesia
Thailand
Malaysia
Philippines
Vietnam
Central & South America
Brazil
Middle East & Africa
Turkey
GCC Countries
Egypt
South Africa
The study objectives are:
To analyze and research the global IGBT and MOSFET Gate Driver Photocoupler status and future forecast,involving, production, revenue, consumption, historical and forecast.
To present the key IGBT and MOSFET Gate Driver Photocoupler manufacturers, production, revenue, market share, and recent development.
To split the breakdown data by regions, type, manufacturers and applications.
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions.
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.
In this study, the years considered to estimate the market size of IGBT and MOSFET Gate Driver Photocoupler :
History Year: 2014 - 2018
Base Year: 2018
Estimated Year: 2019
Forecast Year: 2019 - 2025
This report includes the estimation of market size for value (million USD) and volume (K Units). Both top-down and bottom-up approaches have been used to estimate and validate the market size of IGBT and MOSFET Gate Driver Photocoupler market, to estimate the size of various other dependent submarkets in the overall market. Key players in the market have been identified through secondary research, and their market shares have been determined through primary and secondary research. All percentage shares, splits, and breakdowns have been determined using secondary sources and verified primary sources.
For the data information by region, company, type and application, 2018 is considered as the base year. Whenever data information was unavailable for the base year, the prior year has been considered.
Summary:
Get latest Market Research Reports on IGBTandMOSFETGateDriverPhotocoupler. Industry analysis & Market Report on IGBTandMOSFETGateDriverPhotocoupler is a syndicated market report, published as Global IGBT and MOSFET Gate Driver Photocoupler Market Insights, Forecast to 2025. It is complete Research Study and Industry Analysis of IGBTandMOSFETGateDriverPhotocoupler market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.