GaN has superior properties than silicon such as high breakdown voltage and saturation velocity. The bandgap in GaN is almost thrice the bandgap of silicon. Thus, GaN has the ability to improve power conversion efficiencies, raise power density levels, extend battery lives, and accelerate switching speeds in different end-user segments such as consumer electronics products, telecommunications hardware, electric vehicles, or domestic appliances.
According to this market research and analysis, the opto semiconductor segment accounted for the maximum shares and dominated the market. The increasing adoption of GaN opto-semiconductors by various sectors such as military, aerospace and defense, and consumer electronics, will drive the growth of the market in the next few years.
In 2019, the market size of GaN Devices is xx million US$ and it will reach xx million US$ in 2025, growing at a CAGR of xx% from 2019; while in China, the market size is valued at xx million US$ and will increase to xx million US$ in 2025, with a CAGR of xx% during forecast period.
In this report, 2018 has been considered as the base year and 2019 to 2025 as the forecast period to estimate the market size for GaN Devices.
This report studies the global market size of GaN Devices, especially focuses on the key regions like United States, European Union, China, and other regions (Japan, Korea, India and Southeast Asia).
This study presents the GaN Devices production, revenue, market share and growth rate for each key company, and also covers the breakdown data (production, consumption, revenue and market share) by regions, type and applications. history breakdown data from 2014 to 2019, and forecast to 2025.
For top companies in United States, European Union and China, this report investigates and analyzes the production, value, price, market share and growth rate for the top manufacturers, key data from 2014 to 2019.
In global market, the following companies are covered:
Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Avago Technologies
GaN Systems
Infineon Technologies
OSRAM Opto Semiconductors
Qorvo
Aixtron
Nichia
NXP Semiconductors
Panasonic Semiconductors
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors
Market Segment by Product Type
Power Semiconductor
Opto Semiconductor
Other
Market Segment by Application
Consumer Electronics
Automotive & Transportation
Industrial Use
Aerospace and Defense
Other
Key Regions split in this report: breakdown data for each region.
United States
China
European Union
Rest of World (Japan, Korea, India and Southeast Asia)
The study objectives are:
To analyze and research the GaN Devices status and future forecast in United States, European Union and China, involving sales, value (revenue), growth rate (CAGR), market share, historical and forecast.
To present the key GaN Devices manufacturers, presenting the sales, revenue, market share, and recent development for key players.
To split the breakdown data by regions, type, companies and applications
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market
In this study, the years considered to estimate the market size of GaN Devices are as follows:
History Year: 2014-2018
Base Year: 2018
Estimated Year: 2019
Forecast Year 2019 to 2025
Summary:
Get latest Market Research Reports on GaN Devices. Industry analysis & Market Report on GaN Devices is a syndicated market report, published as Global (United States, European Union and China) GaN Devices Market Research Report 2019-2025. It is complete Research Study and Industry Analysis of GaN Devices market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.