This report covers market size and forecasts of GaN Based Power Device, including the following market information:
Global GaN Based Power Device Market Size, 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global GaN Based Power Device Market Size by Type and by Application, 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global GaN Based Power Device Market Size by Region (and Key Countries), 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global GaN Based Power Device Market Size by Company, 2019- 2020 (quarterly data), (US$ Million) & (K Units)
Key market players
Major competitors identified in this market include Cree (US), Qorvo (US), MACOM (US), Microchip Technology, Analog Devices US), Efficient Power Conversion (US), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Texas Instruments (US), Sumitomo Electric (Japan), Northrop Grumman Corporation (US), Qromis (US), Polyfet (US), TOSHIBA (Japan), Sumitomo Electric (Japan), Mitsubishi Electric (Japan), GaN Systems (Canada), VisIC Technologies (Israel), GaNPower (Canada), Infineon (Germany), Exagan (France), Ampleon (Netherlands), EpiGaN (Belgium), etc.
Based on the Region:
Asia-Pacific (China, Japan, South Korea, India and ASEAN)
North America (US and Canada)
Europe (Germany, France, UK and Italy)
Rest of World (Latin America, Middle East & Africa)
Based on the Type:
Power
RF Power
Based on the Application:
Telecommunications
Automotive
Renewables
Consumer and Enterprise
Aerospace & Defense
Medical
Summary:
Get latest Market Research Reports on GaN Based Power Device. Industry analysis & Market Report on GaN Based Power Device is a syndicated market report, published as Global (United States, European Union and China) GaN Based Power Device Market Research Report 2019-2025. It is complete Research Study and Industry Analysis of GaN Based Power Device market, to understand, Market Demand, Growth, trends analysis and Factor Influencing market.