This report covers market size and forecasts of Power Discrete Module, including the following market information:
Global Power Discrete Module Market Size, 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global Power Discrete Module Market Size by Type and by Application, 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global Power Discrete Module Market Size by Region (and Key Countries), 2019-2021, and 2020 (quarterly data), (US$ Million) & (K Units)
Global Power Discrete Module Market Size by Company, 2019- 2020 (quarterly data), (US$ Million) & (K Units)
Key market players
Major competitors identified in this market include Infineon Technologies, ON Semiconductor, Mitsubishi Electric Corp, Toshiba, STMicroelectronics, Vishay Intertechnology, Fuji Electric, Renesas Electronics, ROHM Semiconductor, Nexperia, Microchip Technology, IXYS Corporation, etc.
Based on the Region:
Asia-Pacific (China, Japan, South Korea, India and ASEAN)
North America (US and Canada)
Europe (Germany, France, UK and Italy)
Rest of World (Latin America, Middle East & Africa)
Based on the Type:
Standard(Non-Integrated) IGBT Modules
Intelligent Power Modules
Thyristor/Diode Modules(& Rectifier Bridges)
Power Integrated Modules
MOSFET Modules
Based on the Application:
Industrial Moter Drives
Consumer
Traction
Car & Light Trucks
Wind & Other Renewable Energy
Solar Energy
Power Supplies
Others
Summary:
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