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Global (United States, European Union and China) Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Research Report 2019-2025

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Table of Contents

    1 Report Overview

    • 1.1 Research Scope
    • 1.2 Major Manufacturers Covered in This Report
    • 1.3 Market Segment by Type
      • 1.3.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Growth Rate by Type (2019-2025)
      • 1.3.2 Discrete IGBT
      • 1.3.3 IGBT Module
      • 1.3.4 Energy & Power
    • 1.4 Market Segment by Application
      • 1.4.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Share by Application (2019-2025)
      • 1.4.2 Consumer Electronics
      • 1.4.3 Inverter & UPS
      • 1.4.4 Electric Vehicle
      • 1.4.5 Industrial System
      • 1.4.6 Others (Medical Devices & Traction)
    • 1.5 Study Objectives
    • 1.6 Years Considered

    2 Global Growth Trends

    • 2.1 Production and Capacity Analysis
      • 2.1.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Value 2014-2025
      • 2.1.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production 2014-2025
      • 2.1.3 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Capacity 2014-2025
      • 2.1.4 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Marketing Pricing and Trends
    • 2.2 Key Producers Growth Rate (CAGR) 2019-2025
      • 2.2.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size CAGR of Key Regions
      • 2.2.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Share of Key Regions
    • 2.3 Industry Trends
      • 2.3.1 Market Top Trends
      • 2.3.2 Market Drivers

    3 Market Share by Manufacturers

    • 3.1 Capacity and Production by Manufacturers
      • 3.1.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Capacity by Manufacturers
      • 3.1.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production by Manufacturers
    • 3.2 Revenue by Manufacturers
      • 3.2.1 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Revenue by Manufacturers (2014-2019)
      • 3.2.2 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Revenue Share by Manufacturers (2014-2019)
      • 3.2.3 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Concentration Ratio (CR5 and HHI)
    • 3.3 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Price by Manufacturers
    • 3.4 Key Manufacturers Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Plants/Factories Distribution and Area Served
    • 3.5 Date of Key Manufacturers Enter into Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market
    • 3.6 Key Manufacturers Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Product Offered
    • 3.7 Mergers & Acquisitions, Expansion Plans

    4 Market Size by Type

    • 4.1 Production and Production Value for Each Type
      • 4.1.1 Discrete IGBT Production and Production Value (2014-2019)
      • 4.1.2 IGBT Module Production and Production Value (2014-2019)
      • 4.1.3 Energy & Power Production and Production Value (2014-2019)
    • 4.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Market Share by Type
    • 4.3 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Value Market Share by Type
    • 4.4 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Ex-factory Price by Type

    5 Market Size by Application

    • 5.1 Overview
    • 5.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Application

    6 Production by Regions

    • 6.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production (History Data) by Regions 2014-2019
    • 6.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Value (History Data) by Regions
    • 6.3 United States
      • 6.3.1 United States Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Growth Rate 2014-2019
      • 6.3.2 United States Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Value Growth Rate 2014-2019
      • 6.3.3 Key Players in United States
      • 6.3.4 United States Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Import & Export
    • 6.4 European Union
      • 6.4.1 European Union Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Growth Rate 2014-2019
      • 6.4.2 European Union Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Value Growth Rate 2014-2019
      • 6.4.3 Key Players in European Union
      • 6.4.4 European Union Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Import & Export
    • 6.5 China
      • 6.5.1 China Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Growth Rate 2014-2019
      • 6.5.2 China Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Value Growth Rate 2014-2019
      • 6.5.3 Key Players in China
      • 6.5.4 China Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Import & Export
    • 6.6 Rest of World
      • 6.6.1 Japan
      • 6.6.2 Korea
      • 6.6.3 India
      • 6.6.4 Southeast Asia

    7 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Regions

    • 7.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption (History Data) by Regions
    • 7.2 United States
      • 7.2.1 United States Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Type
      • 7.2.2 United States Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Application
    • 7.3 European Union
      • 7.3.1 European Union Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Type
      • 7.3.2 European Union Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Application
    • 7.4 China
      • 7.4.1 China Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Type
      • 7.4.2 China Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Application
    • 7.5 Rest of World
      • 7.5.1 Rest of World Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Type
      • 7.5.2 Rest of World Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption by Application
      • 7.5.1 Japan
      • 7.5.2 Korea
      • 7.5.3 India
      • 7.5.4 Southeast Asia

    8 Company Profiles

    • 8.1 Fairchild Semiconductor International Inc
      • 8.1.1 Fairchild Semiconductor International Inc Company Details
      • 8.1.2 Company Description and Business Overview
      • 8.1.3 Production and Revenue of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor
      • 8.1.4 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Product Introduction
      • 8.1.5 Fairchild Semiconductor International Inc Recent Development
    • 8.2 STMicroelectronics
      • 8.2.1 STMicroelectronics Company Details
      • 8.2.2 Company Description and Business Overview
      • 8.2.3 Production and Revenue of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor
      • 8.2.4 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Product Introduction
      • 8.2.5 STMicroelectronics Recent Development
    • 8.3 ABB Ltd
      • 8.3.1 ABB Ltd Company Details
      • 8.3.2 Company Description and Business Overview
      • 8.3.3 Production and Revenue of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor
      • 8.3.4 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Product Introduction
      • 8.3.5 ABB Ltd Recent Development
    • 8.4 Hitachi Power Semiconductor Device Ltd
      • 8.4.1 Hitachi Power Semiconductor Device Ltd Company Details
      • 8.4.2 Company Description and Business Overview
      • 8.4.3 Production and Revenue of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor
      • 8.4.4 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Product Introduction
      • 8.4.5 Hitachi Power Semiconductor Device Ltd Recent Development
    • 8.5 Toshiba Corporation
      • 8.5.1 Toshiba Corporation Company Details
      • 8.5.2 Company Description and Business Overview
      • 8.5.3 Production and Revenue of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor
      • 8.5.4 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Product Introduction
      • 8.5.5 Toshiba Corporation Recent Development
    • 8.6 Mitsubishi Electric Corporation
      • 8.6.1 Mitsubishi Electric Corporation Company Details
      • 8.6.2 Company Description and Business Overview
      • 8.6.3 Production and Revenue of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor
      • 8.6.4 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Product Introduction
      • 8.6.5 Mitsubishi Electric Corporation Recent Development
    • 8.7 Infineon Technologies AG
      • 8.7.1 Infineon Technologies AG Company Details
      • 8.7.2 Company Description and Business Overview
      • 8.7.3 Production and Revenue of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor
      • 8.7.4 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Product Introduction
      • 8.7.5 Infineon Technologies AG Recent Development

    9 Market Forecast

    • 9.1 Global Market Size Forecast
      • 9.1.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Capacity, Production Forecast 2019-2025
      • 9.1.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Value Forecast 2019-2025
    • 9.2 Market Forecast by Regions
      • 9.2.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production and Value Forecast by Regions 2019-2025
      • 9.2.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Consumption Forecast by Regions 2019-2025
    • 9.3 United States
      • 9.3.1 Production and Value Forecast in United States
      • 9.3.2 Consumption Forecast in United States
    • 9.4 European Union
      • 9.4.1 Production and Value Forecast in European Union
      • 9.4.2 Consumption Forecast in European Union
    • 9.5 China
      • 9.5.1 Production and Value Forecast in China
      • 9.5.2 Consumption Forecast in China
    • 9.6 Rest of World
      • 9.6.1 Japan
      • 9.6.2 Korea
      • 9.6.3 India
      • 9.6.4 Southeast Asia
    • 9.7 Forecast by Type
      • 9.7.1 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Forecast by Type
      • 9.7.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Production Value Forecast by Type
    • 9.8 Consumption Forecast by Application

    10 Value Chain and Sales Channels Analysis

    • 10.1 Value Chain Analysis
    • 10.2 Sales Channels Analysis
      • 10.2.1 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Sales Channels
      • 10.2.2 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Distributors
    • 10.3 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Customers

    11 Opportunities & Challenges, Threat and Affecting Factors

    • 11.1 Market Opportunities
    • 11.2 Market Challenges
    • 11.3 Porter's Five Forces Analysis

    12 Key Findings

      13 Appendix

      • 13.1 Research Methodology
        • 13.1.1 Methodology/Research Approach
          • 13.1.1.1 Research Programs/Design
          • 13.1.1.2 Market Size Estimation
          • 13.1.1.3 Market Breakdown and Data Triangulation
        • 13.1.2 Data Source
          • 13.1.2.1 Secondary Sources
          • 13.1.2.2 Primary Sources
      • 13.2 Author Details

      IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.
      IGBT is widely used in various applications such as renewable energy, high voltage direct current (HVDC), motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved durability. Moreover, it supports high input impedance and improved parallel current sharing; thereby, fueling the market growth. However, performance issues, such as current leakage and breakdown, hamper the market growth. Proactive government initiatives to establish HVDCs & smart grids and increase in demand for consumer electronic are expected to provide lucrative opportunities to market players in the near future.
      In 2019, the market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor is xx million US$ and it will reach xx million US$ in 2025, growing at a CAGR of 12.3% from 2019; while in China, the market size is valued at xx million US$ and will increase to xx million US$ in 2025, with a CAGR of xx% during forecast period.
      In this report, 2018 has been considered as the base year and 2019 to 2025 as the forecast period to estimate the market size for Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor.

      This report studies the global market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor, especially focuses on the key regions like United States, European Union, China, and other regions (Japan, Korea, India and Southeast Asia).
      This study presents the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor production, revenue, market share and growth rate for each key company, and also covers the breakdown data (production, consumption, revenue and market share) by regions, type and applications. history breakdown data from 2014 to 2019, and forecast to 2025.
      For top companies in United States, European Union and China, this report investigates and analyzes the production, value, price, market share and growth rate for the top manufacturers, key data from 2014 to 2019.

      In global market, the following companies are covered:
      Fairchild Semiconductor International Inc
      STMicroelectronics
      ABB Ltd
      Hitachi Power Semiconductor Device Ltd
      Toshiba Corporation
      Mitsubishi Electric Corporation
      Infineon Technologies AG
      ...

      Market Segment by Product Type
      Discrete IGBT
      IGBT Module
      Energy & Power

      Market Segment by Application
      Consumer Electronics
      Inverter & UPS
      Electric Vehicle
      Industrial System
      Others (Medical Devices & Traction)

      Key Regions split in this report: breakdown data for each region.
      United States
      China
      European Union
      Rest of World (Japan, Korea, India and Southeast Asia)

      The study objectives are:
      To analyze and research the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor status and future forecast in United States, European Union and China, involving sales, value (revenue), growth rate (CAGR), market share, historical and forecast.
      To present the key Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor manufacturers, presenting the sales, revenue, market share, and recent development for key players.
      To split the breakdown data by regions, type, companies and applications
      To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
      To identify significant trends, drivers, influence factors in global and regions
      To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market

      In this study, the years considered to estimate the market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor are as follows:
      History Year: 2014-2018
      Base Year: 2018
      Estimated Year: 2019
      Forecast Year 2019 to 2025

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