Table of Content

1 Market Overview

• 1.1 Market Segment Overview
  • 1.1.1 Product Definition
  • 1.1.2 Market by Type
    • 1.1.2.1 Silicon Materials
    • 1.1.2.2 Germanium Materials
    • 1.1.2.3 InGaAs Materials
    • 1.1.2.4 Others
  • 1.1.3 Market by Application
    • 1.1.3.1 Industrial
    • 1.1.3.2 Medical
    • 1.1.3.3 Mobility
    • 1.1.3.4 Others
• 1.2 Global and China Market Size
  • 1.2.1 Global Overview
  • 1.2.2 China Overview

2 Global and China Market by Company

• 2.1 Global
  • 2.1.1 Global Sales by Company
  • 2.1.2 Global Price by Company
• 2.2 China
  • 2.2.1 China Sales by Company
  • 2.2.2 China Price by Company

3 Global and China Market by Type

• 3.1 Global
  • 3.1.1 Global Sales by Type
  • 3.1.2 Global Price by Type
• 3.2 China
  • 3.2.1 China Sales by Type
  • 3.2.2 China Price by Type

4 Global and China Market by Application

• 4.1 Global
  • 4.1.1 Global Sales by Application
  • 4.1.2 Global Price by Application
• 4.2 China
  • 4.2.1 China Sales by Application
  • 4.2.2 China Price by Application

5 China Trade

• 5.1 Export
• 5.2 Import

6 Key Manufacturers

• 6.1 First-sensor
  • 6.1.1 Company Information
  • 6.1.2 Product Specifications
  • 6.1.3 Business Data (Capacity, Sales Revenue, Volume, Price, Cost and Margin)
• 6.2 Hamamatsu
• 6.3 Kyosemi Corporation
• 6.4 LUNA
• 6.5 Excelitas
• 6.6 Osi optoelectronics
• 6.7 Edmund Optics
• 6.8 GCS
• 6.9 SiFotonics

7 Industry Upstream

• 7.1 Industry Chain
• 7.2 Raw Materials

8 Market Environment

• 8.1 SWOT
• 8.2 Porter's Five Forces

9 Conclusion

Summary
APD Avalanche Photodiode (APD) is a highly sensitive semiconductor electronic device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication. From a functional standpoint, they can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage, APDs show an internal current gain effect due to impact ionization. However, some silicon APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied before breakdown is reached and hence a greater operating gain. In general, the higher the reverse voltage the higher the gain.
Market Segment as follows:
By Type
Silicon Materials
Germanium Materials
InGaAs Materials
Others
By Application
Industrial
Medical
Mobility
Others
By Company
First-sensor
Hamamatsu
Kyosemi Corporation
LUNA
Excelitas
Osi optoelectronics
Edmund Optics
GCS
SiFotonics
The main contents of the report including:
Section 1:
Product definition, type and application, global and China market overview;
Section 2:
Global and China Market competition by company;
Section 3:
Global and China sales revenue, volume and price by type;
Section 4:
Global and China sales revenue, volume and price by application;
Section 5:
China export and import;
Section 6:
Company information, business overview, sales data and product specifications;
Section 7:
Industry chain and raw materials;
Section 8:
SWOT and Porter's Five Forces;
Section 9:
Conclusion.